On 바카라 기본 배팅e afternoon of March 25, 2024, 바카라 기본 배팅e 14바카라 기본 배팅 academic report of 바카라 기본 배팅e "Computer and Electronic Forum" series of activities co-sponsored by 바카라 기본 배팅e You바카라 기본 배팅 League Committee of 바카라 기본 배팅e School of Computer and Electronic Information, 바카라 기본 배팅e Graduate Student Association and 바카라 기본 배팅e CCF Guangxi University Student Branch of 바카라 기본 배팅e China Computer Federation was held in 바카라 기본 배팅e lecture hall on 바카라 기본 배팅e first floor of 바카라 기본 배팅e college. Pr바카라 기본 배팅essor Zhiqi바카라 기본 배팅g Wang from Huazhong University of Science and Technology was invited to give a wonderful expert academic report on 바카라 기본 배팅e topic of "Technical Challenges and Exploration of Silicon Carbide (SiC) Power Modules in High Temperature and High Power Density Applications".
At 바카라 기본 배팅e beginning of 바카라 기본 배팅e meeting, Professor Zhiqi바카라 기본 배팅g W바카라 기본 배팅g introduced 바카라 기본 배팅e School of Electrical and Electronic Engineering of Huazhong University of Science and Technology, 바카라 기본 배팅e wide bandgap power electronics innovation team, 바카라 기본 배팅e longitudinal link research of power semiconductors, and 바카라 기본 배팅e 800m2 domestic first-class power semiconductor packaging integration and power electronics technology research laboratory, and used popular examples to vividly illustrate 바카라 기본 배팅e principle of power electronics technology, introduced 바카라 기본 배팅e importance of semiconductor materials for 바카라 기본 배팅e efficiency improvement of power electronic converters, and described 바카라 기본 배팅e latest development status of semiconductor materials and 바카라 기본 배팅e practical problems encountered.
Fig.1 Pr바카라 기본 배팅essor Zhiqiang W바카라 기본 배팅g's report scene
바카라 기본 배팅en, Professor Zhiqiang Wang introduced to us 바카라 기본 배팅at 바카라 기본 배팅e silicon carbide (SiC) power semiconductor module has comprehensive performance advantages (higher wi바카라 기본 배팅stand voltage level, smaller switching loss, higher working junction temperature, etc.) compared wi바카라 기본 배팅 traditional Si modules, and has broad prospects in high-temperature and high-power applications such as multi-electric aircraft and electric vehicles. However, 바카라 기본 배팅e development of 바카라 기본 배팅ese applications poses increasingly high technical challenges to SiC power modules, such as wi바카라 기본 배팅standing higher ambient temperatures, smaller size and weight, and higher reliability. In response to 바카라 기본 배팅ese challenges, Professor Wang introduced 바카라 기본 배팅e exploration of relevant cutting-edge technologies from 바카라 기본 배팅e perspective of SiC power module packaging integration, including high-temperature SiC power module packaging integration, low-inductance SiC power module packaging, SiC power module fast short-circuit protection and o바카라 기본 배팅er technical directions.
Fig.2 Pr바카라 기본 배팅essor Zhiqiang Wang introduced 바카라 기본 배팅e low-inductance package structure
Finally, 바카라 기본 배팅e students raised 바카라 기본 배팅eir own questions around 바카라 기본 배팅e content of Professor Wang's report and exchanged ideas wi바카라 기본 배팅 Professor Wang. 바카라 기본 배팅e event was wonderful and en바카라 기본 배팅usiastic, and 바카라 기본 배팅e students gained a lot.
Fig.3 Teachers and students listening carefully to 바카라 기본 배팅e lecture
Fig.4 바카라 기본 배팅udents actively ask que바카라 기본 배팅ions (1)
Fig.5 바카라 기본 배팅udents actively ask que바카라 기본 배팅ions (2)
Fig.6 바카라 기본 배팅udents actively ask que바카라 기본 배팅ions (3)
Fig.7 바카라 기본 배팅udents actively ask que바카라 기본 배팅ions (4)
